Перегляд за автором "Prujszczyk, M."

Сортувати за: Порядок: Результатів:

  • Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Prujszczyk, M.; Bak-Misiuk, J.; Formanek, P. (Физика и техника высоких давлений, 2010)
    Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from ...
  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Hydrogen gettering in annealed oxygen-implanted silicon 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Pressure-induced structural transformations in Si:V and Si:V, Mn 
    Misiuk, A.; Barcz, A.; Chow, L.; Bak-Misiuk, J.; Romanowski, P.; Shalimov, A.; Wnuk, A.; Surma, B.; Vanfleet, R.; Prujszczyk, M. (Физика и техника высоких давлений, 2008)
    Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) ...